au.\*:("GIBBONS, J. F")
Results 1 to 25 of 38
Selection :
Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-x/n-Si heterojunction bipolar transistorsGHANI, T; HOYT, J. L; MCCARTHY, A. M et al.Journal of electronic materials. 1995, Vol 24, Num 8, pp 999-1002, issn 0361-5235Article
Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si1-xGex epitaxial layersKAMINS, T. I; NAUKA, K; JACOWITZ, R. D et al.IEEE electron device letters. 1992, Vol 13, Num 4, pp 177-179, issn 0741-3106Article
Conservation of bond lengths in strained Ge-Si layersWOICIK, J. C; BOULDIN, C. E; PIANETTA, P et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 3, pp 2419-2422, issn 0163-1829Article
Electrical activation of beryllium in preamorphized gallium arsenideOPYD, W. G; GIBBONS, J. F.Journal of applied physics. 1990, Vol 67, Num 12, pp 7417-7422, issn 0021-8979Article
Precipitation of impurities in GaAs amorphized by ion implantationOPYD, W. G; GIBBONS, J. F; MARDINLY, A. J et al.Applied physics letters. 1988, Vol 53, Num 16, pp 1515-1517, issn 0003-6951Article
Damage calculation and measurement for GaAs amorphized by Si implantationOPYD, W. G; GIBBONS, J. F; BRAVMAN, J. C et al.Applied physics letters. 1986, Vol 49, Num 15, pp 974-976, issn 0003-6951Article
Limited reaction processing: growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor depositionREYNOLDS, S; VOOK, D. W; GIBBONS, J. F et al.Applied physics letters. 1986, Vol 49, Num 25, pp 1720-1722, issn 0003-6951Article
Thin, highly doped layers of epitaxial silicon deposited by limited reaction processingGRONET, C. M; STURM, J. C; WILLIAMS, K. E et al.Applied physics letters. 1986, Vol 48, Num 15, pp 1012-1014, issn 0003-6951Article
Thallium-201 lung uptake and peak treadmill exercise first-pass ejection fractionVACCARINO, R. A; JOHNSON, L. L; ANTUNES, M. L et al.The American heart journal. 1995, Vol 129, Num 2, pp 320-329, issn 0002-8703Article
Electron mobility enhancement in strained-Si N-type metal-oxide-semiconductor field-effect transistorsWELSER, J; HOYT, J. L; GIBBONS, J. F et al.IEEE electron device letters. 1994, Vol 15, Num 3, pp 100-102, issn 0741-3106Article
Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layersKUO, P; HOYT, J. L; GIBBONS, J. F et al.Applied physics letters. 1993, Vol 62, Num 6, pp 612-614, issn 0003-6951Article
Effective gettering of gold in silicon at 900°C by low-current corona dischargeFALSTER, R. J; MODLIN, D. N; TILLER, W. A et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 554-558, issn 0021-8979Article
Diffusion and electrical properties of silicon-doped gallium arsenideGREINER, M. E; GIBBONS, J. F.Journal of applied physics. 1985, Vol 57, Num 12, pp 5181-5187, issn 0021-8979Article
A three-dimensional folded dynamic RAM in beam-recrystallized polysiliconSTURM, J. C; GILES, M. D; GIBBONS, J. F et al.IEEE electron device letters. 1984, Vol 5, Num 5, pp 151-153, issn 0741-3106Article
A 14% efficient nonaqueous semiconductor/liquid junction solar cellGIBBONS, J. F; COGAN, G. W; GRONET, C. M et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1095-1097, issn 0003-6951Article
Effects of impurities on the oxidation of MoSi2 on siliconWAKITA, A. S; SIGMON, T. W; GIBBONS, J. F et al.Applied physics letters. 1984, Vol 45, Num 2, pp 140-142, issn 0003-6951Article
Monolayer surface doping of GaAs from a plated zinc sourceDOPKIN, D. M; GIBBONS, J. F.Applied physics letters. 1984, Vol 44, Num 9, pp 884-886, issn 0003-6951Article
Deep levels and impurities at growth-interrupted interfaces : temperature- and gas-switched metalorganic chemical vapor deposition of GaAs with tertiarybutylarsenicVOOK, D. W; GIBBONS, J. F.Journal of applied physics. 1990, Vol 67, Num 4, pp 2100-2108, issn 0021-8979, 9 p.Article
Si/Si1-xGex heterojunction bipolar transistors produced by limited reaction processingKING, C. A; HOYT, J. L; GRONET, C. M et al.IEEE electron device letters. 1989, Vol 10, Num 2, pp 52-54, issn 0741-3106Article
Etching technique for characterization of epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> siliconHOYT, J. L; CRABBE, E. F; PEASE, R. F. W et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 7, pp 1839-1842, issn 0013-4651Article
Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: experiment and modelREYNOLDS, S; VOOK, D. W; GIBBONS, J. F et al.Journal of applied physics. 1988, Vol 63, Num 4, pp 1052-1059, issn 0021-8979, 8 p.Article
Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenicVOOK, D. W; REYNOLDS, S; GIBBONS, J. F et al.Applied physics letters. 1987, Vol 50, Num 19, pp 1386-1387, issn 0003-6951Article
Epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealingHOYT, J. L; CRABBE, E; GIBBONS, J. F et al.Applied physics letters. 1987, Vol 50, Num 12, pp 751-753, issn 0003-6951Article
Calculation of channeling effects during ion implantation using the Boltzmann transport equationGILES, M. D; GIBBONS, J. F.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 10, pp 1918-1924, issn 0018-9383Article
A seeded-channel silicon-on-insulator (SOI) MOS technologyBAERG, W; STURM, J. C; HWA, T. L et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 668-670, issn 0741-3106Article
